Planar polysilicon regions for precision resistors and electrical fuses and method of fabrication

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United States of America Patent

PATENT NO 8816473
APP PUB NO 20130264679A1
SERIAL NO

13440172

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Abstract

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A semiconductor structure providing a precision resistive element and method of fabrication is disclosed. Polysilicon is embedded in a silicon substrate. The polysilicon may be doped to control the resistance. Embodiments may include resistors, eFuses, and silicon-on-insulator structures. Some embodiments may include non-rectangular cross sections.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chou, Anthony I-Chih Hopewell Junction, US 12 72
Kumar, Arvind Hopewell Junction, US 310 3373
Mo, Renee T Hopewell Junction, US 96 1497
Narasimha, Shreesh Hopewell Junction, US 133 1488

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