Saturable absorbers for Q-switching of middle infrared laser cavaties

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United States of America Patent

PATENT NO 8817830
APP PUB NO 20080101423A1
SERIAL NO

11925148

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Abstract

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This disclosure demonstrates successfully using single, polycrystalline, hot pressed ceramic, and thin film Fe doped binary chalcogenides (such as ZnSe and ZnS) as saturable absorbing passive Q-switches. The method of producing polycrystalline ZnSe(S) yields fairly uniform distribution of dopant, large coefficients of absorption (5-50 cm−1) and low passive losses while being highly cost effective and easy to reproduce. Using these Fe2+:ZnSe crystals, stable Q-switched output was achieved with a low threshold and the best cavity configuration yielded 13 mJ/pulse single mode Q-switched output and 85 mJ in a multipulse regime.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
THE UAB RESEARCH FOUNDATIONTUSCALOOSA, AL441

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fedorov, Vladimir Birmingham, US 10 165
Gallian, Andrew Mclean, US 3 4
Martinez, Alan Portland, US 3 4
Mirov, Sergey Birmingham, US 4 33

Cited Art Landscape

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THE UAB RESEARCH FOUNDATION (4)
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The United States of America as represented by the Secretary of the Navy (2)
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Agency for Science, Technology and Research (1)
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BTG INTERNATIONAL LIMITED (1)
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* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
THE UAB RESEARCH FOUNDATION (1)
* 9391424 Saturable absorbers for Q-switching of middle infrared laser cavaties 0 2014
* Cited By Examiner

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