Mask blank, transfer mask, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device
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United States of America Patent
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Sep 2, 2014
Grant Date -
May 10, 2012
app pub date -
Nov 3, 2011
filing date -
Nov 5, 2010
priority date (Note) -
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Abstract
A mask blank for manufacturing a transfer mask adapted to be applied with ArF excimer laser exposure light that has a transparent substrate and a light-shielding film formed into a transfer pattern. The light-shielding film has at least two-layers, one a lower layer composed mainly of a first material containing a transition metal, silicon, and nitrogen, and the other an upper layer composed mainly of a second material containing a transition metal, silicon, and nitrogen. A ratio of a first etching rate of the lower layer to a second etching rate of the upper layer is 1.0 or more and 5.0 or less in etching carried out by supplying a fluorine-containing substance onto a target portion and irradiating charged particles to the target portion. Another ratio satisfies the following formula CN≧−0.00526CMo2−0.640CMo=26.624.
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