Low extension dose implants in SRAM fabrication
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United States of America Patent
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Sep 2, 2014
Grant Date -
Oct 3, 2013
app pub date -
Apr 3, 2012
filing date -
Apr 3, 2012
priority date (Note) -
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Abstract
A static random access memory fabrication method includes forming a gate stack on a substrate, forming isolating spacers adjacent the gate stack, the isolating spacers and gate stack having a gate length, forming a source and drain region adjacent the gate stack, which generates an effective gate length, wherein the source and drain regions are formed from a low extension dose implant that varies a difference between the gate length and the effective gate length.
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