Nonvolatile memory device

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United States of America Patent

PATENT NO 8822966
APP PUB NO 20140008603A1
SERIAL NO

13770463

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Abstract

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A nonvolatile memory device has a memory cell including a resistance change layer, a first electrode, and a second electrode. The resistance change layer switches between high and low resistance states due to the transfer of metal ions from the first electrode in response to voltages applied between the electrodes. The first electrode is formed on a first side of the resistance change layer, and provides metal ions. The second electrode is formed on a second side of the resistance change layer. A memory cell region is formed between the first electrode and the second electrode with the resistance change layer. The memory device also includes a high permittivity layer with a higher dielectric constant than the resistance change layer.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Arayashiki, Yusuke Kanagawa, JP 37 112
Baba, Masanobu Kanagawa, JP 16 144
Takahashi, Kensuke Kanagawa, JP 80 398

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