Memory cells and methods of forming memory cells
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United States of America Patent
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Sep 2, 2014
Grant Date -
Jun 12, 2014
app pub date -
Feb 14, 2014
filing date -
Aug 31, 2010
priority date (Note) -
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Abstract
Some embodiments include a memory cell that contains programmable material sandwiched between first and second electrodes. The memory cell can further include a heating element which is directly against one of the electrodes and directly against the programmable material. The heating element can have a thickness in a range of from about 2 nanometers to about 30 nanometers, and can be more electrically resistive than the electrodes. Some embodiments include methods of forming memory cells that include heating elements directly between electrodes and programmable materials.
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