P-type organic semiconductor/fullerene photoelectric conversion layer
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United States of America Patent
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Sep 2, 2014
Grant Date -
Apr 23, 2009
app pub date -
Oct 20, 2008
filing date -
Oct 18, 2007
priority date (Note) -
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Abstract
A photoelectric conversion element is provided and includes a photoelectric conversion portion which includes: a pair of electrodes including an electron-collecting electrode and a hole-collecting electrode; and a photoelectric conversion layer between the pair of electrodes. At least part of the photoelectric conversion layer includes a mixture layer of a p-type organic semiconductor and a fullerene, and a volume ratio of the fullerene to the p-type organic semiconductor in the photoelectric conversion layer is such that the volume ratio on a side of the electron-collecting electrode is smaller than the volume ratio on a side of the hole-collecting electrode.
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