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Abstract

A memory cell and method for operating a memory cell including a bidirectional access device and memory element electrically coupled in series. The bidirectional access device includes a tunneling capacitance. The memory element programmable to a first and second state by application of a first and second write voltage opposite in polarity to one another. The memory element has a lower capacitance in the first state than the second state. A read unit senses a transient read current due to a voltage drop upon application of a read voltage. Determining if the memory element is the first or second state is based on whether the read current is greater or less than a sense threshold. The sense threshold is based on a capacitance ratio between the first and second state.

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First Claim