Method of using memory instruction including parameter to affect operating condition of memory

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United States of America Patent

PATENT NO 8824213
APP PUB NO 20130167251A1
SERIAL NO

13770881

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Abstract

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Subject matter disclosed herein relates to techniques to use a memory device. A method includes receiving a memory instruction comprising at least one parameter representative of at least one threshold voltage value and a read command to read at least one cell of the memory device. The method further includes detecting at least one voltage value from the at least one cell. The method further includes comparing the at least one voltage value to the at least one threshold voltage value. The method further includes determining at least one logical value of the at least one cell in response to the comparison of the at least one voltage value to the at least one threshold voltage value.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Pio, Federico Brugherio, IT 85 942

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