Forming electrodes for chalcogenide containing devices

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United States of America Patent

PATENT NO 8828788
APP PUB NO 20110278531A1
SERIAL NO

12777419

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The electrode of a phase change memory may be formed with a mixture of metal and a non-metal, the electrode having less nitrogen atoms than metal atoms. Thus, in some embodiments, at least a portion of the electrode has less nitrogen than would be the case in a metal nitride. The mixture can include metal and nitrogen or metal and silicon, as two examples. Such material may have good adherence to chalcogenide with lower reactivity than may be the case with metal nitrides.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bresolin, Camillo Vimercate, IT 12 90
Erbetta, Davide Trezzo sull'Adda, IT 17 128
Gotti, Andrea Pozzo d'Adda-Milan, IT 43 302

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