Power semiconductor device and method for manufacturing such a power semiconductor device
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United States of America Patent
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Sep 9, 2014
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app pub date -
Aug 23, 2013
filing date -
Feb 23, 2011
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Abstract
An insulated gate bipolar device is disclosed which can include layers of different conductivity types between an emitter electrode on an emitter side and a collector electrode on a collector side in the following order: a source region of a first conductivity type, a base layer of a second conductivity type, which contacts the emitter electrode in a contact area, an enhancement layer of the first conductivity type, a floating compensation layer of the second conductivity type having a compensation layer thickness tp, a drift layer of the first conductivity type having lower doping concentration than the enhancement layer and a collector layer of the second conductivity type.
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