Germanium/silicon avalanche photodetector with separate absorption and multiplication regions
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United States of America Patent
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Sep 9, 2014
Grant Date -
Jul 19, 2007
app pub date -
Mar 15, 2007
filing date -
Jun 28, 2005
priority date (Note) -
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Abstract
A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
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