Punch-through semiconductor device and method for producing same

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United States of America Patent

PATENT NO 8829571
APP PUB NO 20120280272A1
SERIAL NO

13468593

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Abstract

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A maximum-punch-through semiconductor device such as an insulated gate bipolar transistor (IGBT) or a diode, and a method for producing same are disclosed. The MPT semiconductor device can include at least a two-layer structure having an emitter metallization, a channel region, a base layer with a predetermined doping concentration ND, a buffer layer and a collector metallization. A thickness W of the base layer can be determined by:

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Patent Owner(s)

  • ABB SCHWEIZ AG;ABB TECHNOLOGY AG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Janisch, Wolfgang Gränichen, CH 7 30
Kopta, Arnost Zürich, CH 22 134
Rahimo, Munaf Uezwil, CH 76 223
Vobecky, Jan Lenzburg, CH 25 60

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