Resistive memory devices

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United States of America Patent

PATENT NO 8829581
SERIAL NO

13866625

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Abstract

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A resistive memory device includes a stack comprising conductor layers and insulator layers, with the edges of the conductor layers and insulating layers exposed on the sides of the stack. An insulator is disposed on a first side of the stack to cover exposed edges of the conductor layers on the first side of the stack. A memory layer disposed over the stack and insulator, such that the memory layer is in electrical contact with edges of the conductor layers on a second side of the stack but is insulated from edges on the first side of the stack by the insulator. A conductive ribbon is disposed over the memory layer to form programmable memory elements where the conductive ribbon crosses edges of the conductor layers on the second side of the stack.

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Patent Owner(s)

  • HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bratkovski, Alexandre M Mountian View, US 157 1847
Wang, Shih-Yuan Palo Alto, US 322 4488
Williams, R Stanley Portola Valley, US 277 5893
Yang, Jianhua Palo Alto, US 174 2056

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