Semiconductor memory device
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United States of America Patent
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Sep 9, 2014
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app pub date -
Oct 9, 2008
filing date -
Oct 10, 2007
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Abstract
According to an aspect of the present invention, there is provided a semiconductor memory device including: a semiconductor substrate having: a contact region; a select gate region; and a memory cell region; a first element isolation region formed in the contact region and having a first depth; a second element isolation region formed in the select gate region and having a second depth; and a third element isolation region formed in the memory cell region and having a third depth which is smaller than the first depth.
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