Local self-boost using a plurality of cut-off cells on a single side of a string of memory cells

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United States of America Patent

PATENT NO 8830775
APP PUB NO 20130235660A1
SERIAL NO

13413762

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Abstract

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Methods for local self-boost of a selected memory cell channel, memory devices, and systems are disclosed. One such method generates a cut-off channel under each of a plurality of memory cells on one of either a source side or a drain side of a selected memory cell.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.;O2COOL, LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fisher, Ryan G Boise, US 13 28
Matsuyama, Yasushi Yokohama, JP 11 192
Sakui, Koji Tokyo, JP 278 4190

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