Methods of dechucking and system thereof
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United States of America Patent
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Sep 16, 2014
Grant Date -
Jan 17, 2013
app pub date -
Jul 12, 2011
filing date -
Jul 12, 2011
priority date (Note) -
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Abstract
A method for dechucking a substrate from an electrostatic chuck (ESC) in a plasma processing system is provided. The method includes flowing a first gas into a plasma chamber. The method also includes flowing a second gas to a backside of the substrate to create a high pressure buildup of the second gas under the backside. The method further includes reducing a flow of the second gas such that at least a portion is trapped under the substrate backside. The method yet also includes pumping out the plasma chamber to increase a pressure differential between a first pressure that exists under the backside of the substrate and a second pressure that exists in a region above the substrate, wherein the pressure differential enables the substrate to be lifted from the ESC. The method yet also includes removing the substrate from the ESC.
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