Nanowire stress sensors and stress sensor integrated circuits, design structures for a stress sensor integrated circuit, and related methods
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United States of America Patent
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Sep 16, 2014
Grant Date -
Jun 13, 2013
app pub date -
Feb 11, 2013
filing date -
Oct 26, 2009
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Abstract
Methods for sensing a mechanical stress and methods of making stress sensor integrated circuits. The sensing methods include transferring the mechanical stress from the object to one or more nanowires in a stress sensor or stress sensor circuit and permitting the nanowires to change in length in response to the mechanical stress. An electrical characteristic of the stress sensor or stress sensor circuit, which has a variation correlated with changes in the magnitude of the mechanical stress, is measured and then assessed to determine the stress magnitude. The manufacture methods include electrically connecting nanowire field effect transistors having, as channel regions, one or more nanowires of either a different crystalline orientation or a different body width for the individual nanowires so that an offset output voltage results when mechanical strain is applied to the nanowires.
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