Robust replacement gate integration
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United States of America Patent
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Sep 16, 2014
Grant Date -
May 8, 2014
app pub date -
Nov 7, 2012
filing date -
Nov 7, 2012
priority date (Note) -
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Abstract
A method including forming a dummy gate on a substrate, wherein the dummy gate includes an oxide, forming a pair of dielectric spacers on opposite sides of the dummy gate, and forming an inter-gate region above the substrate and in contact with at least one of the pair of dielectric spacers, the inter-gate region comprising a protective layer on top of a first oxide layer, wherein the protective layer comprises a material resistant to etching techniques designed to remove oxide. The method may further include removing the dummy gate to leave an opening, and forming a gate within the opening.
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