Method for manufacturing semiconductor device

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United States of America Patent

PATENT NO 8835268
APP PUB NO 20130065326A1
SERIAL NO

13421729

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Abstract

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A method for manufacturing a semiconductor device includes forming a mask film on a partial region of a semiconductor substrate; forming a mask member above the semiconductor substrate in both the region where the mask film is formed and a region where the mask film is not formed; patterning the mask film and an upper portion of the semiconductor substrate by performing etching using the mask member as a mask. The method further includes removing part of the patterned upper portion of the semiconductor substrate by performing etching using the patterned mask film as a mask.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sudo, Gaku Kanagawa-ken, JP 38 436

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