Method of manufacturing solid-state image sensor
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United States of America Patent
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Sep 16, 2014
Grant Date -
Apr 11, 2013
app pub date -
Sep 7, 2012
filing date -
Oct 7, 2011
priority date (Note) -
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Abstract
A method of manufacturing a solid-state image sensor having photoelectric conversion elements and one or more MOS transistors are formed on a semiconductor substrate is provided. The method includes forming a resist pattern having an opening and a shielding portion over the substrate; and implanting ions in the substrate through the opening. When the substrate is viewed from a direction, an isolation region that is positioned between accumulation regions adjacent to one another is exposed in the opening, and when viewed from a different direction, a channel region of the MOS transistors is exposed in the opening, and the isolation region is shielded by the shielding portion. Ions irradiated in the direction are implanted in the isolation region, and ions irradiated in the different direction are implanted in the channel region.
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