Method of manufacturing silicon carbide semiconductor device

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United States of America Patent

PATENT NO 8835288
APP PUB NO 20130065382A1
SERIAL NO

13407249

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Abstract

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A method of manufacturing a silicon carbide semiconductor device of an embodiment includes: implanting ions in a silicon carbide substrate; performing first heating processing of the silicon carbide substrate in which the ions are implanted; and performing second heating processing of the silicon carbide substrate for which the first heating processing is performed, at a temperature lower than the first heating processing.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Furukawa, Masaru Hyogo, JP 40 238
Kono, Hiroshi Kanagawa, JP 97 700
Nishio, Johji Tokyo, JP 90 1263
Shinohe, Takashi Kanagawa, JP 168 1537

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