Wafer backside defectivity clean-up utilizing selective removal of substrate material
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United States of America Patent
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Sep 16, 2014
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app pub date -
Jun 12, 2013
filing date -
Jul 21, 2011
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Abstract
A wafer and a fabrication method include a base structure including a substrate for fabricating semiconductor devices. The base structure includes a front side where the semiconductor devices are formed and a back side opposite the front side. An integrated layer is formed in the back side of the base structure including impurities configured to alter etch selectivity relative to the base structure such that the integrated layer is selectively removable from the base structure to remove defects incurred during fabrication of the semiconductor devices.
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