Sensors using high electron mobility transistors

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United States of America Patent

PATENT NO 8835984
APP PUB NO 20110068372A1
SERIAL NO

12992002

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Abstract

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Embodiments of the invention include sensors comprising AlGaAs/GaAs high electron mobility transistors (HEMTs), inGaP/GaAs HEMTs. InAlAs/InGaAs HEMTs, AlGaAs/InGaAs PHEMTs, InAlAs/InGaAs PHEMTs, Sb based HEMTs, or InAs based HEMTs, the HEMTs having functionalization at a gate surface with target receptors. The target receptors allow sensitivity to targets (or substrates) for detecting breast cancer, prostate cancer, kidney injury, chloride, glucose, metals or pEI where a signal is generated by the HEMI when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor.

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Patent Owner(s)

  • UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kang, Byoung-Sam Gainesville, US 3 73
Lele, Tanmay Gainesville, US 5 97
Pearton, Stephen John Gainesville, US 17 219
Ren, Fan Gainesville, US 59 703
Wang, Hung-Ta Berkeley, US 9 183

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