Method and apparatus for a lateral radiation detector
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United States of America Patent
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Sep 16, 2014
Grant Date -
Feb 16, 2012
app pub date -
Apr 22, 2010
filing date -
Apr 23, 2009
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Abstract
A lateral Metal-Semiconductor-Metal (MSM) Photodetector (PD) is based on amorphous selenium (a-Se). It has low dark current, high photoconductive gain towards short wavelengths, and high speed of operation up to several KHz. From processing point of view, a lateral structure is more attractive due to ease of fabrication as well as compatibility with conventional thin-film transistor (TFT) processes. The lateral a-Se MSM PD therefore has potentials in a variety of optical sensing applications particularly in indirect X-ray imaging utilizing scintillators and ultraviolet (UV) imaging for life sciences.
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