Semiconductor device and fabrication method thereof
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United States of America Patent
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Sep 16, 2014
Grant Date -
Mar 21, 2013
app pub date -
Mar 14, 2012
filing date -
Sep 20, 2011
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Abstract
According to one embodiment, a fabrication method for a semiconductor device includes: injecting an ion into a first substrate; joining the first substrate and a second substrate; irradiating a microwave to agglomerate the ion in a planar state in a desired position in the first substrate and form an agglomeration region spreading in a planar state; separating the second substrate provided with a part of the first substrate from the rest of the first substrate by exfoliating the joined first substrate from the second substrate in the agglomeration region; and grinding a part of the second substrate on a back surface opposite to an exfoliated surface in the second substrate provided with a part of the first substrate.
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