Hybrid nonvolatile shadowed DRAM with an overlapping region between a volatile storage die and a nonvolatile storage die
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United States of America Patent
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Sep 16, 2014
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Apr 22, 2013
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Apr 17, 2007
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Abstract
A composite, hybrid memory device including a first storage die having an array of volatile storage cells and a second storage die having an array of non-volatile storage cells disposed within an integrated circuit package. The hybrid memory device includes a shared interface circuit to receive memory access commands directed to the first storage die and the second storage die and to convey read and write data between an external data path and the first and second storage dice.
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