Magnetic tunnel junction device and method for manufacturing the same

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United States of America Patent

PATENT NO 8841006
APP PUB NO 20110045320A1
SERIAL NO

12658853

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Abstract

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The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes: i) a first magnetic layer including a compound having a chemical formula of (A100-xBx)100-yCy; ii) an insulating layer deposited on the first magnetic layer; and iii) a second magnetic layer deposited on the insulating layer and including a compound having a chemical formula of (A100-xBx)100-yCy. The first and second magnetic layers have perpendicular magnetic anisotropy, A and B are respectively metal elements, and C is at least one amorphizing element selected from a group consisting of boron (B), carbon (C), tantalum (Ta), and hafnium (Hf).

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Patent Owner(s)

  • KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Gyung-Min Seoul, KR 3 15
Min, Byoung Chul Gwangmyeong-si, KR 12 98
Shin, Kyung Ho Seoul, KR 24 200

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