Germanium photodetector

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United States of America Patent

PATENT NO 8841162
APP PUB NO 20140134790A1
SERIAL NO

14104563

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, patterning the Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline Ge layer, implanting n-type ions in the single crystalline Ge layer, heating the device to activate n-type ions in the single crystalline Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Assefa, Solomon Ossining, US 96 1460
Kim, Jeehwan White Plains, US 246 1225
Park, Jin-Hong Fishkill, US 38 380
Vlasov, Yurii A Katonah, US 71 1274

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