Wide-gap semiconductor substrate and method to fabricate wide-gap semiconductor device using the same

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United States of America Patent

PATENT NO 8841681
SERIAL NO

12984106

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Abstract

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A wide-gap semiconductor substrate includes a narrow-gap semiconductor layer, a wide-gap semiconductor layer and an alignment mark. The narrow-gap semiconductor layer has a main surface. The wide-gap semiconductor layer is epitaxially grown on the narrow-gap semiconductor layer. The alignment mark is preliminarily carved in a prescribed position on the main surface so that the alignment mark is preliminarily buried in the wide-gap semiconductor substrate.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kuraguchi, Masahiko Kanagawa-ken, JP 94 727

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