High breakdown voltage semiconductor rectifier
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United States of America Patent
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Sep 23, 2014
Grant Date -
Sep 13, 2012
app pub date -
Sep 7, 2011
filing date -
Mar 10, 2011
priority date (Note) -
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Abstract
A high breakdown voltage diode of the present embodiment includes a first conductive semiconductor substrate, a drift layer formed on the first conductive semiconductor substrate and formed of a first conductive semiconductor, a buffer layer formed on the drift layer and formed of a second conductive semiconductor, a second conductive high concentration semiconductor region formed at an upper portion of the buffer layer, a mesa termination unit formed on an end region of a semiconductor apparatus to relax an electric field of the end region when reverse bias is applied between the semiconductor substrate and the buffer layer, and an electric field relaxation region formed at the mesa termination unit and formed of a second conductive semiconductor.
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