Bonded structure employing metal semiconductor alloy bonding
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United States of America Patent
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Sep 23, 2014
Grant Date -
Jul 14, 2011
app pub date -
Jan 12, 2010
filing date -
Jan 12, 2010
priority date (Note) -
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Abstract
Vertical stacks of a metal portion and a semiconductor portion formed on a first substrate are brought into physical contact with vertical stacks of a metal portion and a semiconductor portion formed on a second substrate. Alternately, vertical stacks of a metal portion and a semiconductor portion formed on a first substrate are brought into physical contact with metal portions formed on a second substrate. The assembly of the first and second substrates is subjected to an anneal at a temperature that induces formation of a metal semiconductor alloy derived from the semiconductor portions and the metal portions. The first substrate and the second substrate are bonded through metal semiconductor alloy portions that adhere to the first and second substrates.
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