Photomasks, methods of forming a photomask, and methods of photolithographically patterning a substrate

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United States of America Patent

PATENT NO 8846273
APP PUB NO 20130323627A1
SERIAL NO

13488231

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Abstract

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A photomask includes a substrate having a device region and an adjacent edge region over transparent material. The device region includes spaced primary features of constant pitch at least adjacent the edge region. The edge region includes spaced sub-resolution assist features of the constant pitch of the spaced primary features at least adjacent the device region and which are off-phase by from about 30° to about 150° from +/−180°. Additional embodiments, including methods, are disclosed.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Chung-Yi Boise, US 35 429
Russell, Ezequiel Vidal Boise, US 4 3
Wang, Fei Boise, US 1021 9346

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