ReRAM stacks preparation by using single ALD or PVD chamber
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United States of America Patent
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Sep 30, 2014
Grant Date -
Aug 15, 2013
app pub date -
Feb 15, 2012
filing date -
Feb 15, 2012
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Abstract
Systems and methods for preparing resistive switching memory devices such as resistive random access memory (ReRAM) devices wherein both oxide and nitride layers are deposited in a single chamber are provided. Various oxide and nitride based layers in the ReRAM device such as the switching layer, current-limiting layer, and the top electrode (and optionally the bottom electrode) are deposited in the single chamber. By fabricating the ReRAM device in a single chamber, throughput is increased and cost is decreased. Moreover, processing in a single chamber reduces device exposure to air and to particulates, thereby minimizing device defects.
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