Methods of forming a pattern on a substrate

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United States of America Patent

PATENT NO 8846517
APP PUB NO 20140127909A1
SERIAL NO

14133962

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method of forming a pattern on a substrate includes forming longitudinally elongated first lines and first sidewall spacers longitudinally along opposite sides of the first lines elevationally over an underlying substrate. Longitudinally elongated second lines and second sidewall spacers are formed longitudinally along opposite sides of the second lines. The second lines and the second sidewall spacers cross elevationally over the first lines and the first sidewall spacers. The second sidewall spacers are removed from crossing over the first lines. The first and second lines are removed in forming a pattern comprising portions of the first and second sidewall spacers over the underlying substrate. Other methods are disclosed.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
deVilliers, Anton J Clifton Park, US 150 892
Sipani, Vishal Boise, US 25 68

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