Method of forming lutetium and lanthanum dielectric structures

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United States of America Patent

PATENT NO 8847334
APP PUB NO 20120074480A1
SERIAL NO

13310245

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Abstract

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Methods of forming dielectric structures are shown. Methods of forming dielectric structures are shown that include lutetium oxide and lanthanum aluminum oxide crystals embedded within the lutetium oxide. Specific methods shown include monolayer deposition which yields process improvements such as chemistry control, step coverage, crystallinity/microstructure control.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ahn, Kie Y Chappaqua, US 652 41490
Forbes, Leonard Corvallis, US 1219 61459

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