Importance

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Abstract

A hybridization method comprises providing a first IC, depositing a first metal layer over electrical contacts on the IC, depositing an insulating layer over the first metal layer and contacts, providing recesses in the insulating layer above each contact, and depositing metal such that the sidewalls of the recesses provide electrical continuity between the top of each recess and the electrical contact it is above. The recesses are backfilled with a sacrificial planarization material and planarized, and a second metal layer is deposited, patterned and etched over each backfilled recess to form openings over each recess and to separate the pixels. The sacrificial planarization material is removed to form compliant structures overhanging the recesses and thereby creating micro-sockets capable of receiving corresponding conductive pins associated with a mating IC. Electrical contact between the first and mating ICs is accomplished through shear between the pins and the micro-sockets.

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First Claim