Step soft program for reversible resistivity-switching elements
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United States of America Patent
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Sep 30, 2014
Grant Date -
Aug 25, 2011
app pub date -
Nov 18, 2010
filing date -
Feb 23, 2010
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Abstract
A method and system for forming, resetting, or setting memory cells is disclosed. One or more programming conditions to apply to a memory cell having a reversible resistivity-switching element may be determined based on its resistance. The determination of one or more programming conditions may also be based on a pre-determined algorithm that may be based on properties of the memory cell. The one or more programming conditions may include a programming voltage and a current limit. For example, the magnitude of the programming voltage may be based on the resistance. As another example, the width of a programming voltage pulse may be based on the resistance. In some embodiments, a current limit used during programming is determined based on the memory cell resistance.
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