Nonvolatile memory device and method for manufacturing the same

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United States of America Patent

PATENT NO 8848455
SERIAL NO

13236853

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Abstract

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According to one embodiment, a method is disclosed for manufacturing a nonvolatile memory device. The method can include forming a second stacked body, removing the second stacked body formed in a region where a first memory unit will be formed, forming a first stacked body, and removing the first stacked body formed in a region where a second memory unit will be formed. The method can include simultaneously processing the first stacked body formed in a region where the first memory unit will be formed and the second stacked body formed in a region where the second memory unit will be formed to form a memory cell of the first memory unit from the first stacked body and form a memory cell of the second memory unit from the second stacked body.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Noma, Kenji Kanagawa-ken, JP 70 456

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