Methods of forming through-substrate interconnects
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United States of America Patent
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Oct 7, 2014
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app pub date -
Jun 6, 2011
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Jun 6, 2011
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Abstract
Some embodiments include methods of forming interconnects through semiconductor substrates. An opening may be formed to extend partway through a semiconductor substrate, and part of an interconnect may be formed within the opening. Another opening may be formed to extend from a second side of the substrate to the first part of the interconnect, and another part of the interconnect may be formed within such opening. Some embodiments include semiconductor constructions having a first part of a through-substrate interconnect extending partially through a semiconductor substrate from a first side of the substrate; and having a second part of the through-substrate interconnect extending from a second side of the substrate and having multiple separate electrically conductive fingers that all extend to the first part of the interconnect.
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Patent Owner(s)
- MICRON TECHNOLOGY, INC.
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Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Ireland, Philip J | Nampa, US | 71 | 1309 |
Wood, Alan G | Boise, US | 415 | 23084 |
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