Pseudomorphic high electron mobility transistor comprising doped low temperature buffer layer

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United States of America Patent

PATENT NO 8853743
APP PUB NO 20140138746A1
SERIAL NO

13679257

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Abstract

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A pseudomorphic high electron mobility transistor (PHEMT) comprises a substrate comprising a Group III-V semiconductor material, a buffer layer disposed over the substrate, wherein the buffer layer comprises microprecipitates of a Group V semiconductor element and is doped with an N-type dopant, and a channel layer disposed over the buffer layer.

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Patent Owner(s)

  • AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Abrokwah, Jonathan Fort Collins, US 7 23
Marsh, Philbert Fort Collins, US 1 10
Perkins, Nathan Fort Collins, US 14 68
Rohdin, Hans G Los Altos, US 5 22
Stanback, John Fort Collins, US 3 33

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