High-mobility trench MOSFETs

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United States of America Patent

PATENT NO 8853772
APP PUB NO 20110278665A1
SERIAL NO

13189332

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Abstract

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High-mobility vertical trench DMOSFETs and methods for manufacturing are disclosed. A source region, a drain region or a channel region of a high-mobility vertical trench DMOSFET may comprise silicon germanium (SiGe) that increases the mobility of the charge carriers in the channel region. In some embodiments the channel region may be strained to increase channel charge carriers mobility.

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Patent Owner(s)

  • ALPHA & OMEGA SEMICONDUCTOR, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hébert, François San Mateo, US 86 906

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