Replacement gate electrode with planar work function material layers

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United States of America Patent

PATENT NO 8853788
SERIAL NO

14058774

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Abstract

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In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gate component can be employed as a gate dielectric or a work function material portion to form a gate structure that enhances performance of a replacement gate field effect transistor.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Guo, Dechao Fishkill, US 268 2433
Han, Shu-Jen Cortlandt Manor, US 225 1507
Wong, Keith Kwong Hon Wappingers Falls, US 241 2682
Yuan, Jun San Diego, US 382 3690

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