Structure and method for adjusting threshold voltage of the array of transistors
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United States of America Patent
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Oct 14, 2014
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app pub date -
Feb 28, 2011
filing date -
Feb 28, 2011
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Abstract
A semiconductor device including a charge storage element present in a buried dielectric layer of the substrate on which the semiconductor device is formed. Charge injection may be used to introduce charge to the charge storage element of the buried dielectric layer that is present within the substrate. The charge that is injected to the charge storage element may be used to adjust the threshold voltage (Vt) of each of the semiconductor devices within an array of semiconductor devices that are present on the substrate.
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