Recessed gate field effect transistor

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8859350
APP PUB NO 20140134808A1
SERIAL NO

14157947

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Abstract

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A semiconductor device having a gate positioned in a recess between the source region and a drain region that are adjacent either side of the gate electrode. A channel region is below a majority of the source region as well as a majority of the drain region and the entire gate electrode.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION;STMICROELECTRONICS, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Clevenger, Lawrence A LaGrangeville, US 714 4453
Radens, Carl LaGrangeville, US 157 2297
Xu, Yiheng Hopewell Junction, US 53 340
Zhang, John H Altamont, US 176 1365

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