Methods of forming metal oxide and memory cells

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8859382
APP PUB NO 20130109147A1
SERIAL NO

13282355

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Abstract

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Some embodiments include methods of forming memory cells. Metal oxide may be deposited over a first electrode, with the deposited metal oxide having a relatively low degree of crystallinity. The degree of crystallinity within the metal oxide may be increased after the deposition of the metal oxide. A dielectric material may be formed over the metal oxide, and a second electrode may be formed over the dielectric material. The degree of crystallinity may be increased with a thermal treatment. The thermal treatment may be conducted before, during, and/or after formation of the dielectric material.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Collins, Dale W Boise, US 54 273
Korber, Mark Boise, US 1 2
Krishnamurthy, Srividya Boise, US 3 2
Lengade, Swapnil Boise, US 28 176
Ramaswamy, D V Nirmal Boise, US 91 650
Rocklein, Noel Boise, US 32 622

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