Solution-assisted carbon nanotube placement with graphene electrodes
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United States of America Patent
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Oct 14, 2014
Grant Date -
Oct 2, 2014
app pub date -
Mar 28, 2013
filing date -
Mar 28, 2013
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Abstract
A semiconductor device includes a substrate having at least one electrically insulating portion. A first graphene electrode is formed on a surface of the substrate such that the electrically insulating portion is interposed between a bulk portion of the substrate and the first graphene electrode. A second graphene electrode formed on the surface of the substrate. The electrically insulating portion of the substrate is interposed between the bulk portion of the substrate and the second graphene electrode. The second graphene electrode is disposed opposite the first graphene electrode to define an exposed substrate area therebetween.
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