Semiconductor device and method for manufacturing same

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United States of America Patent

PATENT NO 8860104
APP PUB NO 20130056810A1
SERIAL NO

13409319

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Abstract

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According to one embodiment, a semiconductor device includes, a semiconductor substrate including a plurality of fins formed in an upper surface of the semiconductor substrate in a first region to extend in a first direction, a first gate electrode extending in a second direction intersecting the first direction to straddle the fins, a first gate insulating film provided between the first gate electrode and the fins, a second gate electrode provided on the semiconductor substrate in the second region; and a second gate insulating film provided between the semiconductor substrate and the second gate electrode. A layer structure of the first gate electrode is different from a layer structure of the second gate electrode.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sudo, Gaku Kanagawa-ken, JP 38 436

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