Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element

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United States of America Patent

PATENT NO 8860105
APP PUB NO 20140008743A1
SERIAL NO

14017565

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Abstract

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A spin-current switched magnetic memory element includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers. The plurality of magnetic layers includes at least one composite layer.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Allenspach, Rolf Adliswil, CH 26 335
Parkin, Stuart Stephen Papworth San Jose, US 70 4523
Slonczewski, John Casimir Katonah, US 13 1143
Sun, Jonathan Zanhong Shrub Oak, US 28 1817
Terris, Bruce David Sunnyvale, US 35 959

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