Optical structure of semiconductor photomultiplier and fabrication method thereof
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United States of America Patent
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Oct 14, 2014
Grant Date -
Jun 21, 2012
app pub date -
Dec 13, 2011
filing date -
Dec 17, 2010
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Abstract
Disclosed is an optical structure formed in an upper side of a semiconductor photomultiplier having a plurality of microcells. The optical structure includes: a first dielectric body formed in an upper side of a dead area between light receiving areas of the respective microcells and having a cross-sectional structure in which a lower side is wider than an upper side; and a second dielectric body formed in the upper side of the light receiving area of each microcell and having a cross-sectional structure in which a lower side is narrower than an upper side, and a refractive index of the second dielectric body is higher than that of the first dielectric body.
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